? semiconductor components industries, llc, 2001 september, 2001 rev. 2 1 publication order number: bzx84c2v4lt1/d bzx84c2v4lt1 series zener voltage regulators 225 mw sot23 surface mount this series of zener diodes is offered in the convenient, surface mount plastic sot23 package. these devices are designed to provide voltage regulation with minimum space requirement. they are well suited for applications such as cellular phones, hand held portables, and high density pc boards. specification features: ? 225 mw rating on fr4 or fr5 board ? zener breakdown voltage range 2.4 v to 75 v ? package designed for optimal automated board assembly ? small package size for high density applications ? esd rating of class 3 (>16 kv) per human body model mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic case finish: corrosion resistant finish, easily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds polarity: cathode indicated by polarity band flammability rating: ul94 v0 maximum ratings rating symbol max unit total power dissipation on fr5 board, (note 1) @ t a = 25 c derated above 25 c p d 225 1.8 mw mw/ c thermal resistance junction to ambient r ja 556 c/w total power dissipation on alumina substrate, (note 2) @ t a = 25 c derated above 25 c p d 300 2.4 mw mw/ c thermal resistance junction to ambient r ja 417 c/w junction and storage temperature range t j , t stg 65 to +150 c 1. fr5 = 1.0 x 0.75 x 0.62 in. 2. alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina device package shipping ordering information sot23 case 318 style 8 http://onsemi.com 3 cathode 1 anode bzx84cxxxlt1 sot23 3000/tape & reel marking diagram see specific marking information in the device marking column of the electrical characteristics table on page 3 of this data sheet. device marking information xxx = specific device code m = date code xxx 2the at1o suffix refers to an 8 mm, 7 inch reel. the at3o suffix refers to an 8 mm, 13 inch reel. m bzx84cxxxlt3 sot23 10,000/tape & reel 3 1 2 devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value.
zener voltage regulator i f v i i r i zt v r v z v f bzx84c2v4lt1 series http://onsemi.com 2 electrical characteristics (pinout: 1-anode, 2-no connection, 3-cathode) (t a = 25 c unless otherwise noted, v f = 0.95 v max. @ i f = 10 ma) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i r reverse leakage current @ v r v r reverse voltage i f forward current v f forward voltage @ i f v z maximum temperature coefficient of v z c max. capacitance @ v r = 0 and f = 1 mhz
bzx84c2v4lt1 series http://onsemi.com 3 electrical characteristics (pinout: 1-anode, 2-no connection, 3-cathode) (t a = 25 c unless otherwise noted, v f = 0.90 v max. @ i f = 10 ma) v z1 (volts) @i zt1 =5ma (note 3) z zt1 (ohms) v z2 (volts) @i zt2 =1ma (note 3) z zt2 (ohms) v z3 (volts) @i zt3 =20ma (note 3) z zt3 (ohms) max reverse leakage current vz (mv/k) @ i zt1 = 5 ma c (pf) device device marking min nom max (ohms) @ i zt1 = 5 ma min max (ohms) @ i zt2 = 1 ma min max (ohms) @ i zt3 = 20 ma v r volts i r a @ min max c (pf) @ v r = 0 f = 1 mhz bzx84c2v4lt1 z11 2.2 2.4 2.6 100 1.7 2.1 600 2.6 3.2 50 50 1 3.5 0 450 bzx84c2v7lt1 z12 2.5 2.7 2.9 100 1.9 2.4 600 3 3.6 50 20 1 3.5 0 450 bzx84c3v0lt1 z13 2.8 3 3.2 95 2.1 2.7 600 3.3 3.9 50 10 1 3.5 0 450 bzx84c3v3lt1 z14 3.1 3.3 3.5 95 2.3 2.9 600 3.6 4.2 40 5 1 3.5 0 450 bzx84c3v6lt1 z15 3.4 3.6 3.8 90 2.7 3.3 600 3.9 4.5 40 5 1 3.5 0 450 bzx84c3v9lt1 z16 3.7 3.9 4.1 90 2.9 3.5 600 4.1 4.7 30 3 1 3.5 2.5 450 bzx84c4v3lt1 w9 4 4.3 4.6 90 3.3 4 600 4.4 5.1 30 3 1 3.5 0 450 bzx84c4v7lt1 z1 4.4 4.7 5 80 3.7 4.7 500 4.5 5.4 15 3 2 3.5 0.2 260 bzx84c5v1lt1 z2 4.8 5.1 5.4 60 4.2 5.3 480 5 5.9 15 2 2 2.7 1.2 225 bzx84c5v6lt1 z3 5.2 5.6 6 40 4.8 6 400 5.2 6.3 10 1 2 2.0 2.5 200 bzx84c6v2lt1 z4 5.8 6.2 6.6 10 5.6 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185 bzx84c6v8lt1 z5 6.4 6.8 7.2 15 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155 bzx84c7v5lt1 z6 7 7.5 7.9 15 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140 bzx84c8v2lt1 z7 7.7 8.2 8.7 15 7.6 8.7 80 7.7 8.8 6 0.7 5 3.2 6.2 135 bzx84c9v1lt1 z8 8.5 9.1 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6 3.8 7.0 130 bzx84c10lt1 z9 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130 bzx84c11lt1 y1 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8 5.4 9.0 130 bzx84c12lt1 y2 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130 bzx84c13lt1 y3 12.4 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8 7.0 11.0 120 bzx84c15lt1 y4 14.3 15 15.8 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 110 bzx84c16lt1 y5 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105 bzx84c18lt1 y6 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100 bzx84c20lt1 y7 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18.0 85 bzx84c22lt1 y8 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20.0 85 bzx84c24lt1 y9 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80 v z1 below @i zt1 =2ma z zt1 below v z2 below @i zt2 = 0.1 ma z zt2 below v z3 below @i zt3 =10ma z zt3 below max reverse leakage current vz (mv/k) below @ i zt1 = 2 ma c (pf) device device marking min nom max below @ i zt1 = 2 ma min max below @ i zt4 = 0.5 ma min max below @ i zt3 = 10 ma v r volts i r a @ min max c (pf) @ v r = 0 f = 1 mhz bzx84c27lt1 y10 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 0.05 18.9 21.4 25.3 70 bzx84c30lt1 y11 28 30 32 80 27.8 32 300 28.1 32.4 50 0.05 21 24.4 29.4 70 bzx84c33lt1 y12 31 33 35 80 30.8 35 325 31.1 35.4 55 0.05 23.1 27.4 33.4 70 bzx84c36lt1 y13 34 36 38 90 33.8 38 350 34.1 38.4 60 0.05 25.2 30.4 37.4 70 bzx84c39lt1 y14 37 39 41 130 36.7 41 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45 bzx84c43lt1 y15 40 43 46 150 39.7 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40 bzx84c47lt1 y16 44 47 50 170 43.7 50 375 44.1 50.5 90 0.05 32.9 42.0 51.8 40 bzx84c51lt1 y17 48 51 54 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40 bzx84c56lt1 y18 52 56 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40 bzx84c62lt1 y19 58 62 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35 bzx84c68lt1 y20 64 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35 bzx84c75lt1 y21 70 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35 3. zener voltage is measured with a pulse test current i z at an ambient temperature of 25 c
bzx84c2v4lt1 series http://onsemi.com 4 typical characteristics vz , temperature coefficient (mv/ c) q v z , nominal zener voltage (v) -3 -2 - 1 0 1 2 3 4 5 6 7 8 12 11 10 9 8 7 6 5 4 3 2 figure 1. temperature coefficients (temperature range 55 c to +150 c) typical t c values v z @ i zt vz , temperature coefficient (mv/ c) q 100 10 1 10 100 v z , nominal zener voltage (v) figure 2. temperature coefficients (temperature range 55 c to +150 c) v z @ i zt 100 v z , nominal zener voltage figure 3. effect of zener voltage on zener impedance 10 1 z zt , dynamic impedance ( ) w 1000 100 10 1 t j = 25 c i z(ac) = 0.1 i z(dc) f = 1 khz i z = 1 ma 5 ma 20 ma v f , forward voltage (v) figure 4. typical forward voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 i f , forward current (ma) 1000 100 10 1 75 v (mmbz5267blt1) 91 v (mmbz5270blt1) 150 c 75 c 25 c 0 c typical t c values
bzx84c2v4lt1 series http://onsemi.com 5 typical characteristics c, capacitance (pf) 100 v z , nominal zener voltage (v) figure 5. typical capacitance 1000 100 10 1 10 1 bias at 50% of v z nom t a = 25 c 0 v bias 1 v bias 12 v z , zener voltage (v) 100 10 1 0.1 0.01 10 8 6 4 2 0 t a = 25 c i z , zener current (ma) v z , zener voltage (v) 100 10 1 0.1 0.01 10 30 50 70 90 t a = 25 c i r , leakage current ( a) m 90 v z , nominal zener voltage (v) figure 6. typical leakage current 1000 100 10 1 0.1 0.01 0.001 0.0001 0.00001 80 70 60 50 40 30 20 10 0 +150 c +25 c -55 c i z , zener current (ma) figure 7. zener voltage versus zener current (v z up to 12 v) figure 8. zener voltage versus zener current (12 v to 91 v)
bzx84c2v4lt1 series http://onsemi.com 6 package dimensions sot23 to236ab case 31809 issue ah style 8: pin 1. anode 2. no connection 3. cathode dim a min max min max millimeters 0.1102 0.1197 2.80 3.04 inches b 0.0472 0.0551 1.20 1.40 c 0.0385 0.0498 0.99 1.26 d 0.0140 0.0200 0.36 0.50 g 0.0670 0.0826 1.70 2.10 h 0.0040 0.0098 0.10 0.25 j 0.0034 0.0070 0.085 0.177 k 0.0180 0.0236 0.45 0.60 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.0984 2.10 2.50 v 0.0177 0.0236 0.45 0.60 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maxiumum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318-01, -02, and -06 obsolete, new standard 318-09. 1 3 2 a l bs v g d h c k j
bzx84c2v4lt1 series http://onsemi.com 7 notes
bzx84c2v4lt1 series http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bzx84c2v4lt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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